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// G4MuElecInelastic.hh, 2011/08/29 A.Valentin, M. Raine
//
// Based on the following publications
//
//          - Inelastic cross-sections of low energy electrons in silicon
//	    for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
//	    NSS Conf. Record 2010, pp. 80-85
//	    - Geant4 physics processes for microdosimetry simulation:
//	    very low energy electromagnetic models for electrons in Si,
//	    NIM B, vol. 288, pp. 66-73, 2012.
//	    - Geant4 physics processes for microdosimetry simulation:
//	    very low energy electromagnetic models for protons and
//	    heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
//
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 

#ifndef G4MuElecInelastic_h
#define G4MuElecInelastic_h 1

#include "G4VEmProcess.hh"
#include "G4Electron.hh"
#include "G4Proton.hh"
#include "G4GenericIon.hh"

// Available models
#include "G4MuElecInelasticModel.hh"

//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......

class G4MuElecInelastic : public G4VEmProcess

{
public: 

  G4MuElecInelastic(const G4String& processName ="MuElecIonisation",
		     G4ProcessType type = fElectromagnetic);

  virtual ~G4MuElecInelastic();

  virtual G4bool IsApplicable(const G4ParticleDefinition&);
  
  virtual void PrintInfo();

protected:

  virtual void InitialiseProcess(const G4ParticleDefinition*);

private:
     
  G4bool       isInitialised;
};

//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
  
#endif